APTGT200SK60T3AG
Buck chopper
Trench + Field Stop IGBT3
Power Module
Application
AC and DC motor control
Switched Mode Power Supplies
V
CES
= 600V
I
C
= 200A @ Tc = 100°C
Features
Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
Kelvin emitter for easy drive
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
28 27 26 25
29
30
23 22
20 19 18
16
15
Benefits
31
32
2
3
4
7
8
10 11 12
14
13
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 25°C
T
j
= 150°C
Max ratings
600
290
200
400
±20
750
400A @ 550V
Unit
V
APTGT200SK60T3AG – Rev 1 October, 2012
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTGT200SK60T3AG
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V, V
CE
= 600V
T
j
= 25°C
V
GE
=15V
I
C
= 200A
T
j
= 150°C
V
GE
= V
CE
, I
C
= 2 mA
V
GE
= 20V, V
CE
= 0V
Min
Typ
1.5
1.7
5.8
Max
250
1.9
6.5
400
Unit
µA
V
V
nA
5.0
Dynamic Characteristics
Symbol
C
ies
C
oes
C
res
Q
G
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
I
sc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit data
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
V
GE
= ±15V ; V
CE
=300V
I
C
=200A
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 200A
R
G
= 2
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 200A
R
G
= 2
T
j
= 25°C
V
GE
= ±15V
T
j
= 150°C
V
Bus
= 300V
I
C
= 200A
T
j
= 25°C
R
G
= 2
T
j
= 150°C
V
GE
≤15V
; V
Bus
= 360V
t
p
≤
6µs ; T
j
= 150°C
Min
Typ
12.3
0.8
0.4
2.2
115
45
225
55
130
50
300
70
1
1.8
5.7
7
1000
Max
Unit
nF
µC
ns
ns
mJ
mJ
A
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
I
RM
I
F
V
F
t
rr
Q
rr
Er
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
I
F
= 200A
V
R
= 300V
I
F
= 200A
V
GE
= 0V
Test Conditions
V
R
=600V
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
Min
600
Typ
Max
250
500
200
1.6
1.5
125
220
9
20
2.2
4.8
2
Unit
V
µA
A
APTGT200SK60T3AG – Rev 1 October, 2012
V
ns
µC
mJ
di/dt =2800A/µs
www.microsemi.com
2–6
APTGT200SK60T3AG
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
IGBT
Diode
4000
-40
-40
-40
2
Typ
Max
0.20
0.31
175
125
100
3
110
Unit
°C/W
V
°C
N.m
g
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol
R
25
∆R
25
/R
25
B
25/85
∆B/B
Characteristic
Resistance @ 25°C
T
25
= 298.15 K
T
C
=100°C
R
T
½
R
25
1
1
R
T
: Thermistor value at T
exp
B
25 / 85
T
25
T
T: Thermistor temperature
Min
Typ
50
5
3952
4
Max
Unit
k
%
K
%
SP3 Package outline
(dimensions in mm)
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTGT200SK60T3AG – Rev 1 October, 2012
APTGT200SK60T3AG
Typical Performance Curve
Output Characteristics (V
GE
=15V)
Output Characteristics
400
350
300
I
C
(A)
T
J
=150°C
T
J
= 150°C
V
GE
=19V
400
350
300
I
C
(A)
T
J
=25°C
T
J
=125°C
250
200
150
100
50
0
0
0.5
1
T
J
=25°C
250
200
150
100
50
0
V
GE
=13V
V
GE
=15V
V
GE
=9V
1.5
V
CE
(V)
2
2.5
3
0
0.5
1
1.5
2
V
CE
(V)
2.5
3
3.5
400
350
300
Transfert Characteristics
14
T
J
=25°C
Energy losses vs Collector Current
12
10
E (mJ)
8
6
4
V
CE
= 300V
V
GE
= 15V
R
G
= 2Ω
T
J
= 150°C
Eoff
250
I
C
(A)
200
150
100
50
0
5
6
7
8
9
10
11
12
V
GE
(V)
Switching Energy Losses vs Gate Resistance
16
V
CE
= 300V
V
GE
=15V
I
C
= 200A
T
J
= 150°C
T
J
=125°C
T
J
=150°C
T
J
=25°C
Er
2
0
0
50
Eon
100 150 200 250 300 350 400
I
C
(A)
Reverse Bias Safe Operating Area
500
400
I
F
(A)
12
E (mJ)
Eoff
Eon
300
200
8
4
Eon
Er
100
0
V
GE
=15V
T
J
=150°C
R
G
=2Ω
0
0
2
4
6
8
10
12
Gate Resistance (ohms)
14
0
100
200
300 400
V
CE
(V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
Thermal Impedance (°C/W)
IGBT
0.2
0.15
0.1
0.05
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.0001
0.001
0.01
0.1
1
10
0.05
0
0.00001
Rectangular Pulse Duration in Seconds
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4–6
APTGT200SK60T3AG – Rev 1 October, 2012
APTGT200SK60T3AG
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
120
100
80
60
40
20
0
0
50
100
150
I
C
(A)
200
250
Hard
switching
ZCS
ZVS
V
CE
=300V
D=50%
R
G
=2Ω
T
J
=150°C
Forward Characteristic of diode
400
350
300
250
I
F
(A)
200
150
100
50
0
0
0.4
0.8
1.2
1.6
V
F
(V)
2
2.4
T
J
=125°C
T
J
=150°C
T
c
=85°C
T
J
=25°C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
Thermal Impedance (°C/W)
0.3
0.25
0.2
0.15
0.1
0.05
0.9
0.7
0.5
0.3
0.1
0.05
0.0001
0.001
0.01
0.1
1
10
Single Pulse
Diode
0
0.00001
Rectangular Pulse Duration in Seconds
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5–6
APTGT200SK60T3AG – Rev 1 October, 2012
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