VTO 110
VTO 175
Three Phase Full Controlled
Rectifier Bridge, B6C
Preliminary data
V
RSM
V
DSM
V
1300
1500
1700
V
RRM
V
DRM
V
1200
1400
1600
VTO 110-12io7 VTO 175-12io7
VTO 110-14io7 VTO 175-14io7
VTO 175-16io7
Type
E
D
C
5
4
6
B
A
2
3
1
I
dAVM
= 110/167 A
V
RRM
= 1200-1600 V
C
~
D
~
E
~
4
5
6
3
2
1
A
+
B
-
Symbol
I
dAV
I
FRMS
, I
TRMS
I
FSM
, I
TSM
Test Conditions
T
C
= 85°C; module
per leg
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
VTO 110 VTO 175
110
58
1150
1230
1000
1070
6600
6280
167
89
-o
1350
1450
11200
10750
9100
8830
150
500
1000
10
10
5
1
0.5
2500
3000
5-15
5-15
300
1500
1600
u
A
A
A
A
A
2
s
A
2
s
As
A
2
s
A/µs
Applications
●
●
e
5000
4750
≤
≤
≤
I
2
t
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
a
(di/dt)
cr
h
T
VJ
= T
VJM
repetitive, I
T
= 50 A
f =400 Hz, t
P
=200 µs
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
non repetitive
di
G
/dt = 0.3 A/µs, I
T
= 1/3 • I
dAV
s
A/µs
V/µs
V
W
W
W
W
°C
°C
°C
V~
V~
Nm
lb.in.
g
(dv/dt)
cr
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
p
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
p
= 30 µs
t
p
= 500 µs
t
p
= 10 ms
-40...+125
125
-40...+125
50/60 Hz, RMS t = 1 min
t=1s
I
ISOL
≤
1 mA
Mounting torque (M6)
Terminal connection torque (M6)
typ.
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
20080227a
© 2008 IXYS All rights reserved
t
A
A
Features
●
●
●
●
Package with screw terminals
Isolation voltage 3000 V~
Planar passivated chips
UL registered E72873
2
●
Input rectifier for PWM converter
Input rectifier for switch mode power
supplies (SMPS)
Softstart capacitor charging
Advantages
●
●
●
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
1-2
VTO 110
VTO 175
Symbol
I
R
, I
D
V
F
, V
T
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
R
thJC
R
thJH
d
S
d
A
a
Test Conditions
V
R
= V
RRM
; V
D
= V
DRM
I
F
, I
T
= 200 A, T
VJ
= 25°C
For power-loss calculations only
(T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
= T
VJM
;
T
VJ
T
VJ
T
VJ
T
VJ
=
=
=
=
25°C
-40°C
25°C
-40°C
≤
≤
≤
≤
≤
≤
≤
≤
≤
0.65
0.108
0.8
0.133
T
VJ
= T
VJM
T
VJ
= 25°C
≤
≤
≤
1.75
0.85
6
1.5
1.6
100
200
0.2
5
450
200
2
0.46
0.077
0.55
0.092
Characteristic Values
VTO 110 VTO 175
5
0.3
1.57
0.85
3.5
mA
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
µs
0.1
1
10
100
1000
I
G
mA
2
3
6
5
1
4
10
V
V
G
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
1
V
D
=
2
/
3
V
DRM
V
D
=
2
/
3
V
DRM
T
VJ
= 25°C
4: P
GAV
= 0.5 W
I
GD
, T
VJ
= 125°C
5: P
GM
= 5 W
6: P
GM
= 10 W
I
G
= 0.3 A; t
G
= 30 µs
di
G
/dt = 0.3 A/µs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= ½ V
DRM
I
G
= 0.3 A; di
G
/dt = 0.3 A/µs
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
Fig. 1 Gate trigger characteristics
120
A
t
K/W
K/W
K/W
K/W
VTO 110
u
mm
mm
m/s
2
I
dAV
100
-o
10
9.4
50
80
60
e
s
a
40
20
0
0
50
100
T
C
°C
150
Dimensions in mm (1 mm = 0.0394")
h
Fig. 2 DC output current at case
temperature
900
A
800
I
FSM
0.7
VTO 110
M6x12
p
50 Hz
80% V
RRM
K/W
0.6
Z
thJC
0.5
0.4
VTO 110
7
30
700
T
VJ
= 45°C
600
500
94
80
72
26
26
3
0.3
400
T
VJ
= 125°C
300
6.5
15
0.2
0.1
0.0
10
-3
54
27
6.5
C ~
A +
3
2
D ~
B -
E ~
200
4
5
6
7
1
6 5 5
100
10
-3
10
-2
10
-1
12
2.8 x 0.8
M6
25
66
10
0
t
s
10
1
10
-2
10
-1
10
0
t
s
10
1
Fig. 3 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 4 Transient thermal impedance
junction to case (per leg)
20080227a
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
2-2
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