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MH8V724AWZJ-6

Description
fast page mode 603979776 - bit ( 8388608 - word BY 72 - bit ) dynamic ram
Categorystorage    storage   
File Size175KB,20 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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MH8V724AWZJ-6 Overview

fast page mode 603979776 - bit ( 8388608 - word BY 72 - bit ) dynamic ram

MH8V724AWZJ-6 Parametric

Parameter NameAttribute value
MakerMitsubishi
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time60 ns
JESD-30 codeR-XDMA-N168
memory density603979776 bi
Memory IC TypeDRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals168
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
organize8MX72
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Terminal formNO LEAD
Terminal locationDUAL
Preliminary Spec.
Specifications subject to
change without notice.
MITSUBISHI LSIs
MH8V724AWZJ -5, -6
FAST PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM
PIN CONFIGURATION
DESCRIPTION
The MH8V724AWZJ is 8388608-word x 72-bit dynamic
ram module. This consist of nine industry standard 8M x 8
dynamic RAMs in SOJ and one industry standard EEPROM
in TSSOP.
The mounting of SOJs and TSSOP on a card edge dual
in-line package provides any application where high
densities and large of quantities memory are required.
This is a socket-type memory module ,suitable for easy
interchange or addition of module.
85pin
94pin
95pin
1pin
10pin
11pin
FEATURES
Type name
MH8V724AWZJ-5
MH8V724AWZJ-6
/RAS
/CAS Address /OE
access access access access
time
time
time
time
Cycle
time
Power
dissipation
(typ.W)
(max.ns) (max.ns) (max.ns) (max.ns) (min.ns)
50
60
13
15
25
30
13
15
90
110
3.51
2.93
Utilizes industry standard 8M x 8 RAMs in SOJ and industry
standard EEPROM in TSSOP
168-pin (84-pin dual dual in-line package)
Single +3.3V(±0.3V) supply operation
Low stand-by power dissipation
9.72mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level
Low operation power dissipation
MH8V724AWZJ -5 . . . . . . . . . . . . . . . . . . 4.22W(Max)
MH8V724AWZJ -6 . . . . . . . . . . . . . . . . . . 3.89W(Max)
All input are directly LVTTL compatible
All output are three-state and directly LVTTL compatible
Includes(0.22uF x 9) decoupling capacitors
4096 refresh cycle every 64ms
Fast-page mode,Read-modify-write,
/CAS before /RAS refresh,Hidden refresh capabilities
Gold plating contact pads
124pin
BACK SIDE
125pin
40pin
FRONT SIDE
41pin
Row Address
A0 ~ A11
Column Address A0 ~ A10
168pin
84pin
APPLICATION
Main memory unit for computers , Microcomputer memory
MIT-DS-0094-0.5
MITSUBISHI
ELECTRIC
( 1 / 20 )
27/Feb./1997

MH8V724AWZJ-6 Related Products

MH8V724AWZJ-6 MH8V724AWZJ-5
Description fast page mode 603979776 - bit ( 8388608 - word BY 72 - bit ) dynamic ram fast page mode 603979776 - bit ( 8388608 - word BY 72 - bit ) dynamic ram

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