K4S643222B-TC10R0 datasheet, PDF

K4S643222B-TC10R0: DescriptionSynchronous DRAM, 2MX32, 7ns, CMOS, PDSO86; Categorystorage storage; File Size448KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4S643222B-TC10R0 Overview

Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1164051149
package instruction	TSSOP, TSSOP86,.46,20
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	2
Maximum access time	7 ns
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G86
JESD-609 code	e0
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	32
Humidity sensitivity level	3
Number of terminals	86
word count	2097152 words
character code	2000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP86,.46,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.001 A
Maximum slew rate	0.13 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL

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