K4S283233F-FE1L datasheet, PDF

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K4S283233F-FE1L: DescriptionSynchronous DRAM, 4MX32, 7ns, CMOS, PBGA90; Categorystorage storage; File Size141KB，12 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4S283233F-FE1L Overview

Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90

K4S283233F-FE1L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	104352360
package instruction	FBGA, BGA90,9X15,32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	7 ns
Maximum clock frequency (fCLK)	105 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B90
JESD-609 code	e0
memory density	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	32
Number of terminals	90
word count	4194304 words
character code	4000000
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	4MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA90,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	3/3.3 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.0005 A
Maximum slew rate	0.13 mA
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

K4S283233F-FE1L Preview

K4S283233F - F(H)E/N/G/C/L/F

1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

• 3.0V & 3.3V power supply.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

•

64ms refresh period (4K cycle).

Commercial Temperature Operation (-25°C ~ 70°C).

Extended Temperature Operation (-25°C ~ 85°C).

90Balls FBGA with 0.8mm ball pitch

( -FXXX : Leaded, -HXXX : Lead Free).

Mobile-SDRAM

GENERAL DESCRIPTION

The K4S283233F is 134,217,728 bits synchronous high data

rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

ORDERING INFORMATION

Part No.

K4S283233F-F(H)E/N/G/C/L/F60

K4S283233F-F(H)E/N/G/C/L/F75

K4S283233F-F(H)E/N/G/C/L/F1H

K4S283233F-F(H)E/N/G/C/L/F1L

Max Freq.

166MHz(CL=3)

133MHz(CL=3)

105MHz(CL=2)

105MHz(CL=3)

LVCMOS

90 FBGA

Leaded (Lead Free)

Interface

Package

- F(H)E/N/G : Normal / Low/ Low Power, Extended Temperature(-25°C ~ 85°C)

- F(H)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

February 2004

K4S283233F - F(H)E/N/G/C/L/F

FUNCTIONAL BLOCK DIAGRAM

Mobile-SDRAM

I/O Control

LWE

Data Input Register

Bank Select

LDQM

1M x 32

Sense AMP

1M x 32

Refresh Counter

Output Buffer

Row Decoder

Row Buffer

DQi

Address Register

LRAS

CLK

CKE

CLK

ADD

Column Decoder

Col. Buffer

LRAS

LCBR

Latency & Burst Length

LCKE

LCBR

LWE

LCAS

Programming Register

LWCBR

LDQM

Timing Register

RAS

CAS

DQM

February 2004

K4S283233F - F(H)E/N/G/C/L/F

Package Dimension and Pin Configuration

< Bottom View

D/2

E/2

Pin Name

CLK

Substrate(2Layer)

Mobile-SDRAM

< Top View

90Ball(6x15) FBGA

DQ26

DQ28

SSQ

DDQ

CLK

DQM1

DDQ

SSQ

DQ11

DQ13

DQ24

DDQ

DQ27

DQ29

DQ31

DQM3

CKE

DQ8

DQ10

DQ12

DDQ

DQ15

SSQ

DQ25

DQ30

DQ9

DQ14

SSQ

DDQ

DQ22

DQ17

A10

BA0

CAS

DQ6

DQ1

DDQ

DQ23

SSQ

DQ20

DQ18

DQ16

DQM2

BA1

DQ7

DQ5

DQ3

SSQ

DQ0

DQ21

DQ19

DDQ

SSQ

A11

RAS

DQM0

SSQ

DDQ

DQ4

DQ2

Pin Function

System Clock

Chip Select

Clock Enable

Address

Bank Select Address

Row Address Strobe

Column Address Strobe

Write Enable

Data Input/Output Mask

Data Input/Output

Power Supply/Ground

Data Output Power/Ground

[Unit:mm]

CKE

~ A

~ BA

RAS

CAS

DQM

~ DQM

< Top View

#A1 Ball Origin Indicator

SAMSUNG

Week

DDQ

SSQ

K4S283233F-XXXX

Symbol

Min

0.30

0.40

Typ

1.10

0.35

8.00

6.40

13.00

11.20

0.80

0.45

Max

1.20

0.40

0.50

0.10

February 2004

K4S283233F - F(H)E/N/G/C/L/F

ABSOLUTE MAXIMUM RATINGS

Parameter

Voltage on any pin relative to V

Voltage on V

supply relative to V

Storage temperature

Power dissipation

Short circuit current

Symbol

, V

OUT

, V

DDQ

STG

Value

-1.0 ~ 4.6

Mobile-SDRAM

Unit

°C

-55 ~ +150

1.0

NOTES:

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to V

= 0V, T

= -25 to 85°C for Extended, -25 to 70°C for Commercial)

Parameter

Supply voltage

DDQ

Input logic high voltage

Input logic low voltage

Output logic high voltage

Output logic low voltage

Input leakage current

2.7

2.2

-0.3

2.4

-10

3.0

3.6

DDQ

+ 0.3

0.5

0.4

= -2mA

= 2mA

Symbol

Min

2.7

Typ

3.0

Max

3.6

Unit

Note

NOTES :

1. VIH (max) = 5.3V AC.The overshoot voltage duration is

≤

3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is

≤

3ns.

3. Any input 0V

≤

VIN

≤

VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.

4. Dout is disabled, 0V

≤

VOUT

≤

VDDQ.

CAPACITANCE

= 3.0V & 3.3V, T

= 23°C, f = 1MHz, V

REF

=0.9V

50 mV)

Clock

RAS, CAS, WE, CS, CKE

DQM

Address

~ DQ

Symbol

CLK

ADD

OUT

Min

Max

4.0

6.0

Unit

Note

February 2004

K4S283233F - F(H)E/N/G/C/L/F

DC CHARACTERISTICS

Mobile-SDRAM

Recommended operating conditions (Voltage referenced to V

= 0V, T

= -25 to 85°C for Extended, -25 to 70°C for Commercial)

Version

Parameter

Symbol

Test Condition

-60

Operating Current

(One Bank Active)

Precharge Standby Current

in power-down mode

Burst length = 1

≥

(min)

= 0 mA

CKE

≤

(max), t

= 10ns

-75

-1H

-1L

Unit

Note

CC1

100

CC2

0.5

CC2

PS CKE & CLK

≤

(max), t

∞

CC2

CKE

≥

(min), CS

≥

(min), t

= 10ns

Input signals are changed one time during

20ns

CKE

≥

(min), CLK

≤

(max), t

∞

Input signals are stable

CKE

≤

(max), t

= 10ns

Precharge Standby Current

in non power-down mode

CC2

Active Standby Current

in power-down mode

CC3

PS CKE & CLK

≤

(max), t

∞

CC3

CKE

≥

(min), CS

≥

(min), t

= 10ns

Input signals are changed one time during

20ns

CKE

≥

(min), CLK

≤

(max), t

∞

Input signals are stable

= 0 mA

Page burst

4Banks Activated

CCD

= 2CLKs

≥

(min)

-E/C

-N/L

Active Standby Current

in non power-down mode

(One Bank Active)

CC3

Operating Current

(Burst Mode)

110

Refresh Current

180

160

150

130

1500

800

Max 40

500

460

440

Max 85/70

800

650

550

°C

Self Refresh Current

CKE

≤

0.2V

-G/F

Internal TCSR

Full Array

1/2 of Full Array

1/4 of Full Array

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Internal TCSR can be supported.

In commercial Temp : Max 40°C/Max 70°C, In extended Temp : Max 40°C/Max 85°C

4. K4S283233F-F(H)E/C**

5. K4S283233F-F(H)N/L**

6. K4S283233F-F(H)G/F**

7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

February 2004

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