TC58FVB004FT-12 datasheet, PDF

TC58FVB004FT-12: Description4M (512k x 8) bit cmos flash memory; Categorystorage storage; File Size1MB，26 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC58FVB004FT-12 Overview

4M (512k x 8) bit cmos flash memory

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Parts packaging code	TSOP1
package instruction	10 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-40
Contacts	40
Reach Compliance Code	unknow
Maximum access time	120 ns
JESD-30 code	R-PDSO-G40
JESD-609 code	e0
length	18.4 mm
memory density	4194304 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	40
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10 mm

	TC58FVB004FT-12	TC58FVT004	TC58FVT004-12	TC58FVT004-10	TC58FVT004-85
Description	4M (512k x 8) bit cmos flash memory	4M (512k x 8) bit cmos flash memory	4M (512k x 8) bit cmos flash memory	4M (512k x 8) bit cmos flash memory	4M (512k x 8) bit cmos flash memory

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