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RN1111

Description
switching, inverter circuit, interface circuit and driver circuit applications
CategoryDiscrete semiconductor    The transistor   
File Size255KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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RN1111 Overview

switching, inverter circuit, interface circuit and driver circuit applications

RN1111 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max0.3 V

RN1111 Related Products

RN1111 RN1110 RN1110_07
Description switching, inverter circuit, interface circuit and driver circuit applications switching, inverter circuit, interface circuit and driver circuit applications switching, inverter circuit, interface circuit and driver circuit applications
Is it lead-free? Contains lead Contains lead -
Is it Rohs certified? conform to conform to -
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Contacts 3 3 -
Reach Compliance Code unknow unknow -
ECCN code EAR99 EAR99 -
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 -
Maximum collector current (IC) 0.1 A 0.1 A -
Collector-based maximum capacity 6 pF 6 pF -
Collector-emitter maximum voltage 50 V 50 V -
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR -
Minimum DC current gain (hFE) 120 120 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 -
Number of components 1 1 -
Number of terminals 3 3 -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type NPN NPN -
Maximum power dissipation(Abs) 0.1 W 0.1 W -
Certification status Not Qualified Not Qualified -
surface mount YES YES -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 250 MHz 250 MHz -
VCEsat-Max 0.3 V 0.3 V -
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