ZVN2106C datasheet, PDF - EEWORLD Datasheet

ZVN2106C: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size314KB，6 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZVN2106C Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	101446759
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Maximum drain current (Abs) (ID)	0.28 A
Maximum drain current (ID)	0.28 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Number of components	1
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.7 W
surface mount	NO
Terminal surface	TIN LEAD
Maximum time at peak reflow temperature	10

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