SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
ISSUE 4 - NOVEMBER 2001
✪
FEATURES
* Up to 5 Amps continuous collector current, up to 10 Amp peak
FZT855
C
*
*
Very low saturation voltage
Excellent h
FE
specified up to 10 Amps
E
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
FZT855
FZT955
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
250
150
6
10
5
3
-55 to +150
UNIT
V
V
V
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
78
FZT855
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
250
250
150
6
TYP.
375
375
180
8
50
1
50
1
10
20
35
60
260
40
65
110
355
1250
1.1
100
100
15
200
200
30
10
90
22
66
2130
MAX.
UNIT
V
V
V
V
nA
A
nA
A
nA
mV
mV
mV
mV
mV
V
CONDITIONS.
I
C
=100 A
I
C
=1 A , RB 1 k
I
C
=10mA*
I
E
=100 A
V
CB
=200V
V
CB
=200V,
T
amb
=100°C
V
CB
=200V
V
CB
=200V,
T
amb
=100°C
V
EB
=6V
I
C
=100mA, I
B
=5mA*
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=5A, I
B
=500mA*
I
C
=5A, I
B
=500mA*
I
C
=5A, V
CE
=5V*
I
C
=10mA, V
CE
=5V
I
C
=1A, V
CE
=5V*
I
C
=5A, V
CE
=5V*
I
C
=10A, V
CE
=5V*
MHz
pF
ns
ns
I
C
==100mA, V
CE
=10V
f=50MHz
V
CB
=10V, f=1MHz
I
C
=1A, I
B1
=100mA
I
B2
=100mA, V
CC
=50V
Collector Cut-Off Current
Emitter Cut-Off Current
I
EBO
Collector-Emitter Saturation V
CE(sat)
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition Frequency
Output Capacitance
Switching Times
V
BE(sat)
V
BE(on)
h
FE
300
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
78
I
CER
R 1k
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