JANSR2N72610U datasheet, PDF - EEWORLD Datasheet

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JANSR2N72610U: Description8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18; CategoryDiscrete semiconductor The transistor; File Size438KB，12 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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JANSR2N72610U Overview

8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18

JANSR2N72610U Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	LCC
package instruction	CHIP CARRIER, R-CQCC-N15
Contacts	18
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	130 mJ
Shell connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.185 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15
JESD-609 code	e0
Number of components	1
Number of terminals	15
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	32 A
Certification status	Not Qualified
Guideline	MIL-19500/601
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

JANSR2N72610U Related Products

	JANSR2N72610U	IRHE7130SCS	JANSF2N72610U	JANSH2N72610U	JANSG2N72610U	IRHE4130PBF
Description	8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18	8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18	8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	LCC	LCC	LCC	LCC	LCC	LCC
package instruction	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15
Contacts	18	18	18	18	18	18
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Avalanche Energy Efficiency Rating (Eas)	130 mJ	130 mJ	130 mJ	130 mJ	130 mJ	130 mJ
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V	100 V	100 V
Maximum drain current (ID)	8 A	8 A	8 A	8 A	8 A	8 A
Maximum drain-source on-resistance	0.185 Ω	0.185 Ω	0.185 Ω	0.185 Ω	0.185 Ω	0.185 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15
Number of components	1	1	1	1	1	1
Number of terminals	15	15	15	15	15	15
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	32 A	32 A	32 A	32 A	32 A	32 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Contains lead	-	Contains lead	Contains lead	Contains lead	Lead free
JESD-609 code	e0	e0	e0	e0	e0	-
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C
Guideline	MIL-19500/601	-	MIL-19500/601	MIL-19500/601	MIL-19500/601	-
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	-

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