Preliminary data
BUZ 104SL-4
SIPMOS
®
Power Transistor
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
Type
BUZ 104SL-4
V
DS
55 V
I
D
3.2 A
R
DS(on)
0.125
Ω
Package
P-DSO-28
Ordering Code
C67078-S. . . .- . .
Maximum Ratings
Parameter
Continuous drain current
one channel active
Symbol
Values
3.2
Unit
A
I
D
I
Dpuls
12.8
T
A
= 25 °C
Pulsed drain current
one channel active
T
A
= 25 °C
Avalanche energy, single pulse
E
AS
52
dv/dt
6
mJ
I
D
= 3.2 A,
V
DD
= 25 V,
R
GS
= 25
Ω
L
= 10.15 mH,
T
j
= 25 °C
Reverse diode dv/dt
kV/µs
I
S
= 3.2 A,
V
DS
= 40 V, di
F
/dt = 200 A/µs
T
jmax
= 175 °C
Gate source voltage
Power dissipation
,one channel active
V
GS
P
tot
±
14
2.4
V
W
T
A
= 25 °C
Operating temperature
Storage temperature
IEC climatic category, DIN IEC 68-1
T
j
T
stg
-55 ... + 175
-55 ... + 175
55 / 175 / 56
°C
Semiconductor Group
1
07/Oct/1997
Preliminary data
BUZ 104SL-4
Thermal Characteristics
Parameter
Symbol
min.
Thermal resistance, junction - soldering point
1)
Thermal resistance, junction - ambient
2)
Values
typ.
-
-
max.
tbd
62.5
K/W
Unit
R
thJS
R
thJA
-
-
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm
2
(one layer,70µm thick) copper area for
Drain connection. PCB is vertical without blown air.
2) one channel active
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSS
55
-
1.6
-
0.1
-
10
0.095
-
2
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS(th)
1.2
V
GS=
V
DS,
I
D
= 20 µA
Zero gate voltage drain current
I
DSS
-
-
-
0.1
1
100
µA
V
DS
= 55 V,
V
GS
= 0 V,
T
j
= -40 °C
V
DS
= 55 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 55 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
I
GSS
-
100
nA
Ω
-
0.125
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
R
DS(on)
V
GS
= 5 V,
I
D
= 3.2 A
Semiconductor Group
2
07/Oct/1997
Preliminary data
BUZ 104SL-4
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
3
-
320
100
55
-
S
pF
-
400
125
70
ns
-
20
30
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 3.2 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3.2 A
R
G
= 16.8
Ω
Rise time
t
r
-
30
45
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3.2 A
R
G
= 16.8
Ω
Turn-off delay time
t
d(off)
-
35
53
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3.2 A
R
G
= 16.8
Ω
Fall time
t
f
-
20
0.55
5.3
14
3.27
30
nC
-
0.85
8
21
V
-
3
-
07/Oct/1997
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 3.2 A
R
G
= 16.8
Ω
Gate charge at threshold
Q
g(th)
Q
g(5)
-
V
DD
= 40 V,
I
D
≥
0.1 A,
V
GS
=0 to 1 V
Gate charge at 5.0 V
V
DD
= 40 V,
I
D
= 3.2 A,
V
GS
=0 to 5 V
Gate charge total
Q
g(total)
-
V
DD
= 40 V,
I
D
= 3.2 A,
V
GS
=0 to 10 V
Gate plateau voltage
V
(plateau)
V
DD
= 40 V,
I
D
= 3.2 A
Semiconductor Group
Preliminary data
BUZ 104SL-4
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current, pulsed
A
-
-
-
-
0.95
50
90
3.2
12.8
V
-
1.6
ns
-
75
nC
-
135
Values
typ.
max.
Unit
I
SM
V
SD
t
rr
Q
rr
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 6.4 A
Reverse recovery time
V
R
= 30 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Semiconductor Group
4
07/Oct/1997
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