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MXPLAD30KP110CAE3/TR

Description
Trans Voltage Suppressor Diode, 30000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1
CategoryDiscrete semiconductor    diode   
File Size336KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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MXPLAD30KP110CAE3/TR Overview

Trans Voltage Suppressor Diode, 30000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1

MXPLAD30KP110CAE3/TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionS-PSSO-G1
Reach Compliance Codecompli
ECCN codeEAR99
Maximum breakdown voltage135 V
Minimum breakdown voltage122 V
Breakdown voltage nominal value128.5 V
Maximum clamping voltage177 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeS-PSSO-G1
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals1
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityBIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage110 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Base Number Matches1
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT 30,000 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 14 to 400 V standoff voltages (V
WM
)
- Fast response
LEVELS
M, MA, MX, MXL
DEVICES
MPLAD30KP14A thru MPLAD30KP400CA, e3
FEATURES
High reliability controlled devices with fabrication and assembly lot traceability
100 % surge tested devices
Low profile surface mount
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to
MicroNote 129
for more details on the screening options.
Suppresses transients up to 30 kW @ 10/1000 µs and 200 kW @ 8/20 µs (see Figure 1)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1,2,3,4,5: MPLAD30KP14A to 400CA
o
Class 5: MPLAD30KP14A to 400CA (short distance)
o
Class 5: MPLAD30KP14A to 220CA (long distance)
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
Class 1,2,3: MPLAD30KP14A to 400CA
o
Class 4: MPLAD30KP14A to 220CA
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
Class 2: MPLAD30KP10A to 400CA
o
Class 3: MPLAD30KP14A to 220CA
o
Class 4: MPLAD30KP14A to 110CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 °C: 30,000 watts at 10/1000 μs (also see Figures 1 and 2)
with impulse repetition rate (duty factor) of 0.05 % or less
t
clamping
(0 volts to V
BR
min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65 ºC to +150 ºC
Thermal resistance: 0.5 ºC/W junction to case or 50ºC/W junction to ambient when mounted
on FR4 PC board with recommended mounting pad (see page 2)
Steady-State Power dissipation: 250 watts at T
C
= 25 °C or 2.5 watts at T
A
= 25 °C when
mounted on FR4 PC board as described for thermal resistance
Forward Surge Voltage: 1500 Amps (theoretical) at 8.3mS half-sine wave (unidirectional
devices only)
Solder temperatures: 260 ºC for 10 s (maximum)
RF01005 Rev D, November 2010
High Reliability Product Group
Page 1 of 4

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