Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Parts packaging code | BCY |
package instruction | CYLINDRICAL, O-MBCY-W3 |
Contacts | 3 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
Maximum collector current (IC) | 0.8 A |
Collector-emitter maximum voltage | 25 V |
Configuration | Single |
Minimum DC current gain (hFE) | 60 |
JEDEC-95 code | TO-18 |
JESD-30 code | O-MBCY-W3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | PNP |
Maximum power dissipation(Abs) | 0.62 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 100 MHz |
Base Number Matches | 1 |
2N5447 | 2N3638 | |
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Description | Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN | Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, PNP, Silicon, TO-92, TO-92, 3 PIN |
Is it lead-free? | Contains lead | Contains lead |
Is it Rohs certified? | incompatible | incompatible |
Parts packaging code | BCY | TO-92 |
package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-PBCY-W3 |
Contacts | 3 | 3 |
Reach Compliance Code | compli | compliant |
ECCN code | EAR99 | EAR99 |
Maximum collector current (IC) | 0.8 A | 0.8 A |
Collector-emitter maximum voltage | 25 V | 25 V |
Configuration | Single | Single |
Minimum DC current gain (hFE) | 60 | 30 |
JEDEC-95 code | TO-18 | TO-92 |
JESD-30 code | O-MBCY-W3 | O-PBCY-W3 |
JESD-609 code | e0 | e0 |
Number of terminals | 3 | 3 |
Maximum operating temperature | 150 °C | 125 °C |
Package body material | METAL | PLASTIC/EPOXY |
Package shape | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | PNP | PNP |
Maximum power dissipation(Abs) | 0.62 W | 0.3 W |
Certification status | Not Qualified | Not Qualified |
surface mount | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
Transistor component materials | SILICON | SILICON |
Nominal transition frequency (fT) | 100 MHz | 100 MHz |
Base Number Matches | 1 | 1 |