Rectifier Diode, Avalanche, 1 Phase, 1 Element, 40A, 1200V V(RRM), Silicon, DO-203AB
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | International Rectifier ( Infineon ) |
package instruction | O-MUPM-H1 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
application | GENERAL PURPOSE |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
JEDEC-95 code | DO-203AB |
JESD-30 code | O-MUPM-H1 |
Maximum non-repetitive peak forward current | 595 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 1 |
Maximum operating temperature | 190 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 40 A |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Peak Reflow Temperature (Celsius) | 260 |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 1200 V |
surface mount | NO |
technology | AVALANCHE |
Terminal form | HIGH CURRENT CABLE |
Terminal location | UPPER |
Maximum time at peak reflow temperature | 40 |
Base Number Matches | 1 |