V73CAG02(808/168)RF
HIGH PERFORMANCE 2Gbit DDR3 SDRAM
8 BANKS X 32Mbit X 8
8 BANKS X 16Mbit X 16
- G6
DDR3-800
Clock Cycle Time ( t
CK5, CWL=5
)
Clock Cycle Time ( t
CK6, CWL=5
)
Clock Cycle Time ( t
CK7, CWL=6
)
Clock Cycle Time ( t
CK8, CWL=6
)
Clock Cycle Time ( t
CK9, CWL=7
)
Clock Cycle Time ( t
CK10, CWL=7
)
Clock Cycle Time ( t
CK11, CWL=8
)
Clock Cycle Time ( t
CK13, CWL=9
)
Clock Cycle Time ( t
CK14, CWL=10
)
System Frequency (f
CK max
)
3.0ns
2.5ns
-
-
-
-
-
-
-
400 MHz
- H7
DDR3-1066
3.0ns
2.5ns
1.875 ns
1.875 ns
-
-
-
-
-
533 MHz
- I9
DDR3-1333
3.0ns
2.5 ns
1.875 ns
1.875 ns
1.5 ns
1.5 ns
-
-
-
667 MHz
- J11
DDR3-1600
3.0ns
2.5 ns
1.875 ns
1.875 ns
1.5 ns
1.5 ns
1.25 ns
-
-
800 MHz
- K13
DDR3-1866
3.0ns
2.5 ns
1.875 ns
1.875 ns
1.5 ns
1.5 ns
1.25 ns
1.07 ns
-
933 MHz
- L14
DDR3-2133
3.0ns
2.5 ns
1.875 ns
1.875 ns
1.5 ns
1.5 ns
1.25 ns
1.07 ns
0.938 ns
1066 MHz
Specifications
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Density : 2G bits
Organization :
- 32M words x 8 bits x 8 banks (V73CAG02808RF)
- 16M words x 16 bits x 8 banks (V73CAG02168RF)
Package :
- 78-ball FBGA for X8 / 96-ball FBGA for X16
- Lead-free (RoHS compliant) and Halogen-free
Power supply : VDD, VDDQ = 1.5V ± 0.075V
Data rate : 800Mbps/1066Mbps/1333Mbps/1600Mbps/1866Mbps/
2133Mbps
1KB page size for X8 / 2KB page size for X16
- Row address: A0 to A14 (V73CAG02808RF)
- Row address: A0 to A13 (V73CAG02168RF)
- Column address: A0 to A9
Eight internal banks for concurrent operation
Burst lengths (BL) : 8 and 4 with Burst Chop (BC)
Burst type (BT) :
- Sequential (8, 4 with BC)
- Interleave (8, 4 with BC)
CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11, 13, 14
CAS Write Latency (CWL) : 5, 6, 7, 8, 9, 10
Precharge : auto precharge option for each burst access
Driver strength : RZQ/7, RZQ/6 (RZQ = 240
Ω)
Refresh : auto-refresh, self-refresh
Refresh cycles :
- Average refresh period
7.8
μs
at 0°C
≤
Tc
≤
+85°C
3.9
μs
at +85°C < Tc
≤
+95°C
Operating case temperature range
- Commercial Tc = 0°C to +95°C
- Industrial Tc = -40°C to +95°C
- Automotive Tc = -40°C to +105°C
Features
-
-
-
-
-
-
-
-
-
-
Double-data-rate architecture; two data transfers per clock cycle
The high-speed data transfer is realized by the 8 bits prefetch pipe-
lined architecture
Bi-directional differential data strobe (DQS and DQS) is transmitted/
received with data for capturing data at the receiver
DQS is edge-aligned with data for READs; center-aligned with data
for WRITEs
Differential clock inputs (CK and CK)
DLL aligns DQ and DQS transitions with CK transitions
Commands entered on each positive CK edge; data and data mask
referenced to both edges of DQS
Data mask (DM) for write data
Posted CAS by programmable additive latency for better command
and data bus efficiency
On-Die Termination (ODT) for better signal quality
- Synchronous ODT
- Dynamic ODT
- Asynchronous ODT
Multi Purpose Register (MPR) for pre-defined pattern read out
ZQ calibration for DQ drive and ODT
Programmable Partial Array Self-Refresh (PASR)
RESET pin for Power-up sequence and reset function
SRT range : Normal/extended
Programmable Output driver impedance control
-
-
-
-
-
-
Device Usage Chart
Operating
Temperature
Range
0°C
≤
Tc
≤
95°C
-40°C
≤
Tc
≤
95°C
-40°C
≤
Tc
≤
105°C
Package Outline
78-ball FBGA
96-ball FBGA
•
•
•
- G6
•
•
•
- H7
•
•
•
1
Speed
- I9
•
•
•
- J11
•
•
•
- K13
•
•
•
- L14
•
•
•
Power
Std.
•
•
•
L
•
•
•
Temperature
Mark
Blank
I
H
V73CAG02(808/168)RF Rev.1.1 September 2020
ProMOS TECHNOLOGIES
Signal Pin Description
Pin
CK, CK
V73CAG02(808/168)RF
Type
Input
Function
Clock :
CK and CK are differential clock inputs. All address and control input signals are sampled on
the crossing of the positive edge of CK and negative edge of CK. Output (read) data is referenced to
the crossings of CK and CK
Clock Enable :
CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input
buffers and output drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh oper-
ation (all banks idle), or Active Power-Down (Row Active in any bank). CKE is asynchronous for self
refresh exit. After V
REFCA
has become stable during the power on and initialization sequence, it must
be maintained during all operations (including Self-Refresh). CKE must be maintained high throughout
read and write accesses. Input buffers, excluding CK, CK, ODT and CKE are disabled during power-
down. Input buffers, excluding CKE, are disabled during Self -Refresh.
Chip Select :
All commands are masked when CS is registered HIGH. CS provides for external Rank
selection on systems with multiple Ranks. CS is considered part of the command code.
On Die Termination :
ODT (registered HIGH) enables termination resistance internal to the DDR3
SDRAM. When enabled, ODT is only applied to each DQ, DQS, DQS and DM/TDQS, NU/TDQS
(When TDQS is enabled via Mode Register A11=1 in MR1) signal for x8 configurations. The ODT pin
will be ignored if the Mode Register (MR1) is programmed to disable ODT.
Command Inputs :
RAS, CAS and WE (along with CS) define the command being entered.
Input Data Mask :
DM is an input mask signal for write data. Input data is masked when DM is sampled
HIGH coincident with that input data during a Write access. DM is sampled on both edges of DQS. For
x8 device, the function of DM or TDQS/TDQS is enabled by Mode Register A11 setting in MR1.
Bank Address Inputs :
BA0 - BA2 define to which bank an Active, Read, Write or Precharge command
is being applied. Bank address also determines which mode register is to be accessed during a MRS
cycle.
Address Inputs :
Provided the row address for Active commands and the column address for Read /
Write commands to select one location out of the memory array in the respective bank. (A10/AP and
A12/BC have additional functions, see below)
The address inputs also provide the op-code during Mode Register Set commands.
Autoprecharge :
A10 is sampled during Read/Write commands to determine whether Autoprecharge
should be per-formed to the accessed bank after the Read/Write operation. (HIGH:Autoprecharge;
LOW: No Autoprecharge)A10 is sampled during a Precharge command to determine whether the Pre-
charge applies to one bank (A10 LOW) or all banks (A10 HIGH). if only one bank is to be precharged,
the bank is selected by bank addresses.
Burst Chop :
A12 is sampled during Read and Write commands to determine if burst chop(on-the-fly)
will be per-formed. (HIGH : no burst chop, LOW : burst chopped). See command truth table for details.
Active Low Asynchronous Reset :
Reset is active when RESET is LOW, and inactive when RESET
is HIGH. RESET must be HIGH during normal operation. RESET is a CMOS rail to rail signal with DC
high and low at 80% and 20% of VDD, i.e. 1.20V for DC high and 0.30V for DC low.
Data Input/ Output :
Bi-directional data bus.
Data Strobe :
Output with read data, input with write data. Edge-aligned with read data, centered in
write data. For the x16, DQSL corresponds to the data on DQL0-DQL7; DQSU corresponds to the data
on DQU0-DQU7. The data strobe DQS, DQSL and DQSU are paired with differential signals DQS,
DQSL and DQSU, respectively, to provide differential pair signaling to the system during reads and
writes. DDR3 SDRAM supports differential data strobe only and does not support single-ended.
CKE
Input
CS
ODT
Input
Input
RAS, CAS, WE
DM
(DMU), (DML)
Input
Input
BA0 - BA2
Input
A0 - A14
Input
A10 / AP
Input
A12 / BC
RESET
Input
Input
DQ
DQS, DQS
Input/
Output
Input/
Output
V73CAG02(808/168)RF Rev.1.1 September 2020
5
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