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QSD123

Description
PHOTO TRANSISTOR DETECTOR
CategoryLED optoelectronic/LED    photoelectric   
File Size160KB,2 Pages
ManufacturerQT Optoelectronics
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QSD123 Overview

PHOTO TRANSISTOR DETECTOR

QSD123 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerQT Optoelectronics
Reach Compliance Codeunknow
Coll-Emtr Bkdn Voltage-Mi30 V
ConfigurationSINGLE
Maximum dark power100 nA
Infrared rangeYES
JESD-609 codee0
Nominal photocurrent4 mA
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Optoelectronic device typesPHOTO TRANSISTOR
peak wavelength880 nm
Maximum power dissipation0.1 W
Maximum response time0.000008 s
shapeROUND
size5 mm
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

QSD123 Related Products

QSD123 QSD124 QSD122
Description PHOTO TRANSISTOR DETECTOR PHOTO TRANSISTOR DETECTOR PHOTO TRANSISTOR DETECTOR
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow
Coll-Emtr Bkdn Voltage-Mi 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE
Maximum dark power 100 nA 100 nA 100 nA
Infrared range YES YES YES
JESD-609 code e0 e0 e0
Nominal photocurrent 4 mA 6 mA 1 mA
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Number of functions 1 1 1
Maximum operating temperature 100 °C 100 °C 100 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Optoelectronic device types PHOTO TRANSISTOR PHOTO TRANSISTOR PHOTO TRANSISTOR
peak wavelength 880 nm 880 nm 880 nm
Maximum power dissipation 0.1 W 0.1 W 0.1 W
Maximum response time 0.000008 s 0.00001 s 0.000006 s
shape ROUND ROUND ROUND
size 5 mm 5 mm 5 mm
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maker QT Optoelectronics QT Optoelectronics -

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