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Q62702-A879

Description
0.12 A, 40 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size93KB,3 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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Q62702-A879 Overview

0.12 A, 40 V, SILICON, SIGNAL DIODE

BAT 64
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
Pin Configuration
BAT 64-04
BAT64-05
BAT64-06
ESD: ElectroStatic Discharge
sensitive device, observe handling precautions!
Type
Marking Ordering Code
Pin Configuration
BAT 64
BAT 64-04
BAT 64-05
BAT 64-06
63s
64s
65s
66s
Q62702-A879
Q62702-A961
Q62702-A962
Q62702-A963
1=A
1=A
1=A
1=C
2=C
2=A
2=C
3=C
3 = C/A
3 = C/C
3 = A/A
Package
SOT-23
SOT-23
SOT-23
SOT-23
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Symbol
Values
40
250
120
800
mW
250
150
- 55 ... + 150
495
355
°C
Unit
V
mA
V
R
I
F
Average forward current (50/60Hz, sinus)
I
FAV
Surge forward current (t
≤ 10ms)
I
FSM
Total Power dissipation
P
tot
T
j
T
stg
R
thJA
R
thJS
T
S
= 61 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
1)
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
1
Jan-31-1997

Q62702-A879 Related Products

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