IRLR3410TRRPBF datasheet, PDF - EEWORLD Datasheet

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IRLR3410TRRPBF: Descriptionmosfet 100v 1 N-CH hexfet 105mohms 22.7nc; CategoryDiscrete semiconductor The transistor; File Size283KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRLR3410TRRPBF Overview

mosfet 100v 1 N-CH hexfet 105mohms 22.7nc

IRLR3410TRRPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA
package instruction	LEAD FREE, PLASTIC, DPAK-3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	AVALANCHE RATED, ULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	150 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	17 A
Maximum drain current (ID)	17 A
Maximum drain-source on-resistance	0.125 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	79 W
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

IRLR3410TRRPBF Related Products

	IRLR3410TRRPBF	IRLR3410TRLPBF
Description	mosfet 100v 1 N-CH hexfet 105mohms 22.7nc	mosfet mosft 100v 15a 105mohm 22.7nc loglv
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA	TO-252AA
package instruction	LEAD FREE, PLASTIC, DPAK-3	LEAD FREE, PLASTIC, DPAK-3
Contacts	3	3
Reach Compliance Code	_compli	not_compliant
ECCN code	EAR99	EAR99
Other features	AVALANCHE RATED, ULTRA LOW RESISTANCE	AVALANCHE RATED, ULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	150 mJ	150 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (Abs) (ID)	17 A	17 A
Maximum drain current (ID)	17 A	17 A
Maximum drain-source on-resistance	0.125 Ω	0.125 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	79 W	79 W
Maximum pulsed drain current (IDM)	60 A	60 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrie	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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