MBR20H90CTG & MBR20H100CTG
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AB
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
2
3
MBR20H90CTG
MBR20H100CTG
PIN 1
PIN 3
PIN 2
CASE
1
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
10 A x 2
90 V, 100 V
150 A
0.70 V
3.5 µA
175 °C
MECHANICAL DATA
Case:
TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 155 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse current per diode at t
p
= 2 µs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
, T
STG
MBR20H90CTG
90
90
90
20
10
150
0.5
10 000
- 65 to + 175
MBR20H100CTG
100
100
100
UNIT
V
V
V
A
A
A
V/µs
°C
Document Number: 88856
Revision: 25-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
MBR20H90CTG & MBR20H100CTG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 10 A
I
F
= 10 A
I
F
= 20 A
I
F
= 20 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
SYMBOL
TYP.
0.80
0.64
0.87
0.74
-
-
MAX.
0.85
0.70
0.93
0.80
3.5
4.5
UNIT
Maximum instantaneous forward voltage per diode
(1)
V
F
V
Maximum reverse current per diode at working peak
reverse voltage
(1)
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
I
R
µA
mA
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
θJC
MBR
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
TO-220AB
Note:
(1) Automotive grade AEC Q101 qualified
PREFERRED P/N
MBR20H100CTG-E3/45
MBR20H100CTGHE3/45
(1)
UNIT WEIGHT (G)
1.85
1.85
PACKAGE CODE
45
45
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
24
175
T
J
= T
J
Max.
8.3
ms Single Half Sine-Wave
150
Average Forward Current (A)
20
Peak Forward Surge Current (A)
16
125
12
100
8
75
4
50
0
0
25
50
75
100
125
150
175
25
1
10
100
Case Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88856
Revision: 25-Mar-08
MBR20H90CTG & MBR20H100CTG
Vishay General Semiconductor
100
1000
T
J
= 175 °C
Instantaneous Forward Current (A)
10
T
J
= 150 °C
1
T
J
= 125 °C
T
J
= 100 °C
0.1
T
J
= 25 °C
T
J
= - 40 °C
0.01
0.1
Junction Capacitance (pF)
1.1
100
10
0.3
0.5
0.7
0.9
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10 000
T
J
= 150 °C
T
J
= 125 °C
100
T
J
= 100 °C
100
1000
Transient Thermal Impedance (°C/W)
100
Instantaneous Reverse Current (µA)
10
10
1
T
J
= 25 °C
0.1
1
0.01
20
40
60
80
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
Document Number: 88856
Revision: 25-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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www.vishay.com
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Revision: 12-Mar-12
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Document Number: 91000