Doc No.
TT4-EA-11522
Revision.
2
Product Standards
Transistors with Built-in Resistor
DRC9124X0L
DRC9124X0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA9124X
DRC5124X in SSMini3 type package
Features
High forward current transfer ratio hFE
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Unit: mm
1.6
0.26
3
0.13
1
2
0.85
1.6
0.7
(0.5) (0.5)
1.0
Marking Symbol: NF
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic
JEITA
Code
SSMini3-F3-B
SC-89
SOT-490
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Topr
Tstg
Rating
50
50
100
125
150
-40 to +85
-55 to +150
Unit
V
V
mA
mW
°C
°C
°C
Internal Connection
B
R
1
R
2
C
E
Resistance
value
Electrical Characteristics Ta = 25
C
3
C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
Collector-emitter voltage (Base open)
VCEO
Collector-base cutoff current (Emitter open)
ICBO
Collector-emitter cutoff current (Base open)
ICEO
Emitter-base cutoff current (Collector open)
IEBO
Forward current transfer ratio
hFE
Collector-emitter saturation voltage
VCE(sat)
Vi(on)
Input voltage
Vi(off)
Input resistance
R1
Resistance ratio
R1/R2
Note)
R1
R2
Typ
22
47
k
k
Conditions
IC = 10
μA,
IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
VCE = 10 V, IC = 5 mA
IC = 10 mA, IB = 0.5 mA
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 100
μA
Min
50
50
Max
0.1
0.5
0.2
400
0.25
Unit
V
V
μA
μA
mA
-
V
V
V
k
-
80
2.1
0.6
-30% 22 +30%
0.37 0.47 0.57
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page 1 of 3
Established : 2009-10-09
Revised
: 2014-02-27
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