BSZ088N03MS G datasheet, PDF - EEWORLD Datasheet

BSZ088N03MS G: Descriptionmosfet optimos 3 M-series; Categorysemiconductor Discrete semiconductor; File Size633KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSZ088N03MS G Overview

mosfet optimos 3 M-series

Parameter Name	Attribute value
Manufacture	Infine
Product Category	MOSFET
RoHS	Yes
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Breakdown Voltage	20 V
Id - Continuous Drain Curre	11 A
Rds On - Drain-Source Resistance	8.8 mOhms
Configurati	Single Quad Drain Triple Source
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipati	2.1 W
Mounting Style	SMD/SMT
Package / Case	TSDSON-8
Packaging	Reel
Channel Mode	Enhanceme
Fall Time	2.4 ns
Minimum Operating Temperature	- 55 C
Rise Time	3 ns
Factory Pack Quantity	5000
Typical Turn-Off Delay Time	18 ns

	BSZ088N03MS G	BSZ088N03MSGATMA1
Description	mosfet optimos 3 M-series	MOSFET N-CH 30V 40A TSDSON-8

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