2B82 datasheet, PDF - EEWORLD Datasheet

2B82: DescriptionTrans Voltage Suppressor Diode, 250W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, DO-15; CategoryDiscrete semiconductor diode; File Size118KB，1 Pages; ManufacturerInternational Semiconductor Inc

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2B82 Overview

Trans Voltage Suppressor Diode, 250W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, DO-15

Parameter Name	Attribute value
Objectid	1471260610
package instruction	O-PALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW IMPEDANCE
Maximum breakdown voltage	90.2 V
Minimum breakdown voltage	73.8 V
Breakdown voltage nominal value	82 V
Shell connection	ISOLATED
Maximum clamping voltage	118 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-15
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	250 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
polarity	BIDIRECTIONAL
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	66.4 V
Maximum reverse current	5 µA
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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