Bulletin PD-20731 rev.
C
12/03
MUR820
MURB820
MURB820-1
Ultrafast Rectifier
Features
•
•
•
•
Ultrafast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
t
rr
= 25ns
I
F(AV)
= 8Amp
V
R
= 200V
Description/ Applications
International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultra fast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-
wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
STG
Peak Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Total Device, (Rated V
R
), T
C
= 150°C
Non Repetitive Peak Surge Current
Peak Repetitive Forward Current
(Rated V
R
, Square wave, 20 KHz), T
C
= 150°C
Operating Junction and Storage Temperatures
-65 to 175
°C
100
16
Max
200
8
Units
V
A
Case Styles
MUR820
MURB820
MURB820-1
TO-220AC
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D
2
PAK
TO-262
1
MUR820, MURB820, MURB820-1
Bulletin PD-20731 rev. C 12/03
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
200
-
-
-
-
-
-
-
25
8.0
-
0.975
0.895
5
250
-
-
V
V
V
µA
µA
pF
nH
I
R
= 100µA
I
F
= 8A
I
F
= 8A, T
J
= 150°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 200V
Measured lead to lead 5mm from package body
.
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
-
20
34
35
25
-
ns
I
F
= 1.0A, di
F
/dt = 50A/µs, V
R
= 30V
I
F
= 0.5A, I
R
= 1.0A, I
REC
= 0.25A
T
J
= 25°C
T
J
= 125°C
I
F
= 8A
V
R
= 160V
di
F
/dt = 200A/µs
I
RRM
Peak Recovery Current
-
-
1.7
4.2
23
75
-
-
-
-
A
T
J
= 25°C
T
J
= 125°C
Q
rr
Reverse Recovery Charge
-
-
nC
T
J
= 25°C
T
J
= 125°C
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
R
thJA
R
thCS
Wt
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heatsink
Weight
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
0.5
2.0
0.07
-
-
Max
- 65 to 175
- 65 to 175
3.0
50
-
-
-
12
10
Units
°C
°C/ W
g
(oz)
Kg-cm
lbf.in
Mounting Torque
6.0
5.0
Mounting Surface, Flat, Smooth and Greased
2
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MUR820, MURB820, MURB820-1
Bulletin PD-20731 rev. C 12/03
100
100
T J = 175˚C
150˚C
Reverse Current - I
R
(µA)
10
1
125˚C
100˚C
0.1
25˚C
10
Instantaneous Forward Current - I
F
(A)
T = 175˚C
J
0.01
0.001
0
50
100
150
200
250
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
T
J
= 150˚C
T
J
= 25˚C
1000
1
Junction Capacitance - C
T
(pF)
T = 25˚C
J
100
0.1
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Forward Voltage Drop - V
FM
(V)
10
Thermal Impedance Z
thJC
(°C/W)
10
1
10
100
1000
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
P
DM
t1
t2
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.1
Single Pulse
(Thermal Resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
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MUR820, MURB820, MURB820-1
Bulletin PD-20731 rev. C 12/03
180
Allowable Case Temperature (°C)
Average Power Loss ( Watts )
10
170
DC
8
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
160
6
150
Square wave (D = 0.50)
Rated Vr applied
4
RMS Limit
DC
140
see note (2)
2
130
0
3
6
9
12
Average Forward Current - I
F
(AV)
(A)
0
0
3
6
9
12
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
50
200
40
IF = 16A
IF = 8 A
IF = 4 A
V
R
= 160V
T
J
= 125˚C
T
J
= 25˚C
160
IF = 16A
IF = 8 A
IF = 4 A
trr ( nC )
30
Qrr ( nC )
V
R
= 160V
T
J
= 125˚C
T
J
= 25˚C
120
80
20
40
10
100
1000
0
100
1000
di
F
/dt (A/µs )
Fig. 7 - Typical Reverse Recovery vs. di
F
/dt
di
F
/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di
F
/dt
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
4
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MUR820, MURB820, MURB820-1
Bulletin PD-20731 rev. C 12/03
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
di
F
/dt
dif/dt
ADJUST G
D
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
2
Q
rr
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
/dt
di
f
F
/dt
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
x I
RRM
Q
rr
=
2
5. di
(rec) M
/ dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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