QED121/122/123
PLASTIC INFRARED LIGHT EMITTING DIODE
PACKAGE DIMENSIONS
0.195 (4.95)
FEATURES
•
!=
880 nm
REFERENCE
SURFACE
0.305 (7.75)
• Chip material = AlGaAs
• Package type: T-1 3/4 (5mm lens diameter)
• Matched Photosensor: QSD122/123/124
0.040 (1.02)
NOM
0.800 (20.3)
MIN
• Narrow Emission Angle, 18°
• High Output Power
• Package material and color: Clear, peach tinted, plastic
0.050 (1.25)
CATHODE
0.100 (2.54)
NOM
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
NOTES:
1. Derate power dissipation linearly 2.67
mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
4. Soldering iron
1/16”
(1.6mm) minimum
from housing.
SCHEMATIC
ANODE
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
CATHODE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
(T
A
=25°C)
MIN
TYP
MAX
UNITS
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
200
Unit
°C
°C
°C
°C
mA
V
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SYMBOL
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity QED121
Radiant Intensity QED122
Radiant Intensity QED123
Rise Time
Fall Time
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA, tp = 20 ms
V
R
= 5 V
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA
!
PE
"
V
F
I
R
I
E
I
E
I
E
t
r
t
f
—
—
—
—
20
50
80
—
—
880
±9
—
—
—
—
—
800
800
—
—
1.7
10
40
100
—
—
—
nm
Deg.
V
µA
mW/sr
mW/sr
mW/sr
ns
ns
1 of 2
100021B
QED121/122/123
PLASTIC INFRARED LIGHT EMITTING DIODE
TYPICAL PERFORMANCE CURVES
NORMALIZED COLLECTOR CURRENT
10
1
I
F
= 100 mA
Normalized to:
Pulse Width = 100 µs
Duty Cycle = 0.1%
V
CC
= 5 V
R
L
= 100
#
T
A
= 25˚C
NORMALIZED RADIANT INTENSITY
Normalized to:
I
F
= 100 mA, T
A
= 25˚C
Pulse Width = 100 µs
1
0.8
0.6
I
F
= 20 mA
0.1
0.4
0.01
0.2
0.001
1
10
100
1000
0
0
1
2
3
4
5
6
I
F
- INPUT CURRENT (mA)
LENS TIP SEPERATION (INCHES)
Fig. 1 Normalized Radiant Intensity vs. Input Current
Fig. 2 Coupling Characteristics of QED12X and QSD12X
1.0
2.5
NORMALIZED RADIANT INTENSITY
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
F
- FORWARD VOLTAGE (V)
I
F
= 100 mA
2
I
F
= 50 mA
1.5
1
I
F
= 10 mA
Pulse Width = 100 µs
Duty Cycle = 0.1%
I
F
= 20 mA
0.5
0
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90 100
775
800
825
850
875
900
925
950
T
A
- TEMPERATURE (˚C)
!
(nm)
Fig. 3 Forward Voltage vs. Temperature
Fig. 4 Normalized Radiant Intensity vs. Wavelength
Fig. 5 Radiation Pattern
20
30
40
50
60
70
80
90
100
80
60
40
20
0
20
40
60
80
100
10
0˚
-10
-20
-30
-40
-50
-60
-70
-80
-90
2 of 2
100021B