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T625N4200TOF

Description
Silicon Controlled Rectifier, 625000mA I(T), 4200V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size108KB,1 Pages
ManufacturerTelefunken Semiconductor GmbH & Co Kg
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T625N4200TOF Overview

Silicon Controlled Rectifier, 625000mA I(T), 4200V V(DRM),

T625N4200TOF Parametric

Parameter NameAttribute value
Objectid101750082
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time450 µs
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current300 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current600 mA
Maximum leakage current250 mA
On-state non-repetitive peak current16000 A
Maximum on-state voltage2.85 V
Maximum on-state current625000 A
Maximum operating temperature120 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage4200 V
surface mountNO
Trigger device typeSCR
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