MWT-470SN datasheet, PDF - EEWORLD Datasheet

MWT-470SN: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size465KB，5 Pages; ManufacturerMicrowave Technology Inc.

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MWT-470SN Overview

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

Parameter Name	Attribute value
Objectid	1404838744
package instruction	MICROWAVE, S-CQMW-F4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	6 V
Maximum drain current (Abs) (ID)	0.105 A
FET technology	METAL SEMICONDUCTOR
highest frequency band	K BAND
JESD-30 code	S-CQMW-F4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE
Package form	MICROWAVE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	0.27 W
Minimum power gain (Gp)	7.5 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	QUAD
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

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