K3N4C1000E-GC12 datasheet, PDF

K3N4C1000E-GC12: DescriptionMASK ROM, 512KX16, 120ns, CMOS, PDSO44; Categorystorage storage; File Size29KB，3 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K3N4C1000E-GC12 Overview

MASK ROM, 512KX16, 120ns, CMOS, PDSO44

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1155499209
package instruction	SOP, SOP44,.63
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	120 ns
Spare memory width	8
JESD-30 code	R-PDSO-G44
JESD-609 code	e0
memory density	8388608 bit
Memory IC Type	MASK ROM
memory width	16
Humidity sensitivity level	3
Number of terminals	44
word count	524288 words
character code	512000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX16
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP44,.63
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.00005 A
Maximum slew rate	0.05 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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