AN26024A
Ultra small, Single Band LNA-IC for 2.4 GHz Band Applications
FEATURES
•
Low voltage operation
•
Low current consumption
8.0 mA typ.
30 µA typ.
•
High gain
•
Low noise figure
17.0 dB typ.
0.9 dB typ.
(High-Gain mode)
(Low-Gain mode)
(High-Gain mode)
(High-Gain mode)
+3.3 V typ.
DESCRIPTION
AN26024A is a single band LNA (Low Noise Amplifier)-
IC for 2.4 GHz Band applications.
Realizing high performance by using 0.18 µm SiGeC
Bi-CMOS process (f
T
= 90 GHz, f
max
= 140 GHz).
High/Low Gain-mode is changeable, controlled by
integrated CMOS logic circuit.
Achieving miniaturization by using small size Wafer
Level Chip Size Package (WLCSP).
•
Low distortion
+4.0 dBm typ. (High-Gain mode)
• 5 pin Wafer level chip size package (WLCSP)
APPLICATIONS
WLAN／WiMAX
SIMPLIFIED APPLICATION
50
Ω
L2
RF output
Components
V
CC
A3
B3
C2
L1
L2
C1
C2
Size
0603
0603
0603
0603
Value
5.1 nH
4.7 nH
1 000 pF
100 000 pF
Part Number
LQP03TN5N1H04
LQP03TN4N7H04
GRM33B30J104KE18
Vendor
Murata
Murata
Murata
GRM033B11C102KD01 Murata
TOP VIEW
A2
Notes)
This application circuit is an example. The operation of mass
production set is not guaranteed. You should perform enough
evaluation and verification on the design of mass production
set. You are fully responsible for the incorporation of the
above application circuit and information in the design of your
equipment.
A1
C1
L1
RF input
50
Ω
B1
CNT
(Gain cnt)
Publication date: February 2013
1
Ver. CEB
AN26024A
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply voltage
Supply current
Operating ambient temperature
Operating junction temperature
Storage temperature
Symbol
V
CC
I
CC
T
opr
T
j
T
stg
IN (Pin No.A1)
Input Voltage Range
CNT (Pin No.B1)
OUT (Pin No.A3)
ESD
HBM (Human Body Model)
Rating
3.7
18
–40 to +85
-40 to +125
–55 to +125
—
-0.3 to V
CC
-0.3 to V
CC
2
Unit
V
mA
°C
°C
°C
V
V
V
kV
Note
*1
—
*2
*2
*2
*3
—
—
—
Notes). This product may sustain permanent damage if subjected to conditions higher than the above stated absolute maximum rating.
This rating is the maximum rating and device operating at this range is not guaranteeable as it is higher than our stated
recommended operating range.
When subjected under the absolute maximum rating for a long time, the reliability of the product may be affected.
*1:The values under the condition not exceeding the above absolute maximum ratings and the power dissipation.
*2:Except for the operating ambient temperature, operating junction temperature and storage temperature,
all ratings are for Ta = 25°C.
*3:RF signal input pin. Do not apply DC. Do not apply more than 0 dBm to RF input.
POWER DISSIPATION RATING
PACKAGE
WLCSP
θ
JA
1391℃/W
PD (Ta=25
°C)
0.072 W
PD (Ta=85
°C)
0.029 W
Note). For the actual usage, please refer to the PD-Ta characteristics diagram in the package specification, supply
voltage, load and ambient temperature conditions to ensure that there is enough margin follow the power and
the thermal design does not exceed the allowable value.
CAUTION
Although this has limited built-in ESD protection circuit, but permanent damage may occur on it.
Therefore, proper ESD precautions are recommended to avoid electrostatic damage to the MOS gates
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply voltage range
Symbol
V
CC
Min.
3.0
Typ.
3.3
Max.
3.6
Unit
V
Note
*1
Note) *1 : The values under the condition not exceeding the above absolute maximum ratings and the power dissipation.
2
Ver. CEB
AN26024A
ELECRTRICAL CHARACTERISTICS
Note). T
a
= 25°C±2°C,
V
CC
= 3.3 V
Parameter
DC electrical characteristics
Supply current HG
Supply current LG
Input voltage (High-Gain mode)
Input voltage (Low-Gain mode)
SW current (High)
Symbol
Condition
Min
Limits
Typ
Max
Unit
Note
I
CC
H
I
CC
L
VIH
VIL
IIH
V
CC
current at High-Gain
mode, No input signal
V
CC
current at Low-Gain
mode, No input signal
—
—
Current at CNT pin
VIH = V
CC
—
—
1.48
0
—
8
30
—
—
30
11
90
3.6
0.6
45
mA
μA
V
V
μA
—
—
—
—
—
ELECRTRICAL CHARACTERISTICS (continued)
Note). T
a
= 25°C±2°C,
V
CC
= 3.3 V,
fRX = 2.442 GHz, PRX = –30 dBm, CW unless otherwise specified.
Parameter
AC electrical characteristics
Power Gain HG
Power Gain LG
GHS
GLS
High-Gain mode
Low-Gain mode
PRX = –20 dBm
High-Gain mode
f1 = fRX – 10 MHz
f2 = fRX – 20 MHz
Input 2 signals (f1, f2)
15.5
–9
17.0
–7
18.5
–5
dB
dB
—
—
Symbol
Condition
Limits
Typ
Unit
Note
Min
Max
IIP3
–10 MHz offset HG
IIP3H1S
–1
4
—
dBm —
3
Ver. CEB
AN26024A
APPLICATION INFORMATION
REFERENCE VALUES FOR DESIGN
Note). T
a
= 25°C±2°C,
V
CC
= 3.3 V,
fRX = 2.4 GHz, 2.442 GHz, 2.484 GHz, PRX = –30 dBm, CW unless otherwise specified.
Reference values
Parameter
AC electrical characteristics
Power Gain HG
Power Gain LG
Noise Figure HG
Noise Figure LG
IIP3
–10 MHz offset
GH
GL
NFH
NFL
High-Gain mode
Low-Gain mode
PRX = –20 dBm
High-Gain mode
Low-Gain mode
High-Gain mode
f1 = fRX – 10 MHz
f2 = fRX – 20 MHz
Input 2 signals (f1, f2)
High-Gain mode
f1 = fRX + 10 MHz
f2 = fRX + 20 MHz
Input 2 signals (f1, f2)
High-Gain mode
Low-Gain mode
f1 = fRX
f2 = fRX + 100 kHz
Input 2 signals (f1, f2)
Low-Gain mode
High-Gain mode
Low-Gain mode
High-Gain mode
Low-Gain mode
High-Gain mode
Low-Gain mode
15.5
–9
—
—
17
–7
1.0
7
18.5
–5
1.4
9.5
dB
dB
dB
dB
*1
*1
*1,*2
*1,*2
Symbol
Condition
Min
Typ
Max
Unit
Note
HG
IIP3H1
–1
4
—
dBm
*1
IIP3
+10 MHz offset
Input P1dB HG
HG
IIP3H2
–1
4
—
dBm
*1
IP1dBH
–20
–13
—
dBm
*1
IIP3
+100 kHz offset LG
Input P1dB LG
Reverse Isolation HG
Reverse Isolation LG
Input Return Loss
Input Return Loss
HG
LG
IIP3L
10
24
—
dBm
*1
IP1dBL
ISOH
ISOL
S11H
S11L
S22H
S22L
0
30
5
8.5
4
8.5
6.5
8
36
7
14
5
12
10
—
—
—
—
—
—
—
dBm
dB
dB
dB
dB
dB
dB
*1
*1
*1
*1
*1
*1
*1
Output Return Loss HG
Output Return Loss LG
Note) *1 : Checked by design, not production tested.
*2 : RF input Connector & substrate loss (0.09 dB) included.
4
Ver. CEB
AN26024A
APPLICATION INFORMATION (continued)
REFERENCE VALUES FOR DESIGN (continued)
Note). T
a
= -40°C to 85°C,
V
CC
= 3.0 to 3.6 V ,
Reference values
Parameter
DC electrical characteristics
Supply current HG
Supply current LG
SW current (High)
I
CC
HT
I
CC
LT
IIHT
V
CC
current at High-Gain mode
No input signal
V
CC
current at Low-Gain mode
No input signal
Current at CNT pin
VIH = V
CC
—
—
—
8
30
30
12.7
100
51
mA
μA
μA
*1
*1
*1
Symbol
Condition
Min
Typ
Max
Unit
Note
Note) *1 : Checked by design, not production tested.
5
Ver. CEB
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