2N7002KDWT/R7 datasheet, PDF - EEWORLD Datasheet

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2N7002KDWT/R7: DescriptionSmall Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2N7002KDWT/R7 Overview

Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6

2N7002KDWT/R7 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	ROHS COMPLIANT PACKAGE-6
Contacts	6
Reach Compliance Code	compli
ECCN code	EAR99
Other features	ULTRA-LOW RESISTANCE
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.115 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2N7002KDW

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES

• R

DS(ON)

, V

@10V,I

@500mA=3Ω

• R

DS(ON)

, V

@4.5V,I

@200mA=4Ω

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected 2KV HBM

• Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.054(1.35)

0.045(1.15)

0.030(0.75)

0.021(0.55)

0.056(1.40)

0.047(1.20)

SOT-363

Unit

：

inch(mm)

0.087(2.20)

0.074(1.90)

0.010(0.25)

MECHANICALDATA

• Case: SOT-363 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Approx. Weight: 0.0002 ounces, 0.006 grams

• Marking : K27

0.012(0.30)

0.005(0.15)

0.040(1.00)

0.031(0.80)

0.010(0.25)

0.003(0.08)

0.044(1.10)

MAX.

0.087(2.20)

0.078(2.00)

0.018(0.45)

0.006(0.15)

Maximum RATINGS and Thermal Characteristics (T

=25

C unless otherwise noted )

PA RA M E TE R

D r a i n- S o ur c e Vo lta g e

Ga te - S o ur c e Vo lta g e

C o nti nuo us D r a i n C ur r e nt

P uls e d D r a i n C ur r e nt

S ym b o l

D M

= 2 5

= 7 5

S TG

θJ

Li mi t

+20

11 5

800

200

120

- 5 5 to + 1 5 0

625

Uni ts

M a xi m um P o we r D i s s i p a ti o n

Op e r a ti ng J unc ti o n a nd S to r a g e

Te mp e r a tur e Ra ng e

Junction-to Ambient Thermal

Resistance(PCB mounted)

C /W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

May 21.2010-REV.01

PAGE . 1

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