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1N2799

Description
Rectifier Diode, 1 Phase, 1 Element, 40A, 350V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PIN
CategoryDiscrete semiconductor    diode   
File Size158KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

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1N2799 Overview

Rectifier Diode, 1 Phase, 1 Element, 40A, 350V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PIN

1N2799 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDO-5
package instructionO-MUPM-D1
Contacts1
Reach Compliance Codecompliant
Is SamacsysN
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-203AB
JESD-30 codeO-MUPM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current800 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current40 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage350 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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