DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Parts packaging code | BGA |
| package instruction | TBGA, |
| Contacts | 60 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 0.75 ns |
| Other features | AUTO/SELF REFRESH |
| JESD-30 code | R-PBGA-B60 |
| JESD-609 code | e1 |
| length | 13 mm |
| memory density | 268435456 bit |
| Memory IC Type | DDR DRAM |
| memory width | 16 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 60 |
| word count | 16777216 words |
| character code | 16000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 16MX16 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TBGA |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, THIN PROFILE |
| Peak Reflow Temperature (Celsius) | 260 |
| Certification status | Not Qualified |
| Maximum seat height | 1.17 mm |
| self refresh | YES |
| Maximum supply voltage (Vsup) | 2.7 V |
| Minimum supply voltage (Vsup) | 2.3 V |
| Nominal supply voltage (Vsup) | 2.5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form | BALL |
| Terminal pitch | 1 mm |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 20 |
| width | 8 mm |
| Base Number Matches | 1 |
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