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CSD16406Q3

Description
25V, N ch NexFET MOSFET™, single SON3x3, 7.4mOhm 8-VSON-CLIP -55 to 150
CategoryDiscrete semiconductor    The transistor   
File Size410KB,12 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Environmental Compliance
Stay tuned Parametric

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CSD16406Q3 Overview

25V, N ch NexFET MOSFET™, single SON3x3, 7.4mOhm 8-VSON-CLIP -55 to 150

CSD16406Q3 Parametric

Parameter NameAttribute value
Brand NameTexas Instruments
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerTexas Instruments
package instruction3.30 X 3.30 MM, ROHS COMPLIANT, PLASTIC, SON-8
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time12 weeks
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID282365
Samacsys Pin Count8
Samacsys Part CategoryMOSFET (N-Channel)
Samacsys Package CategoryOther
Samacsys Footprint NameDQG_VSON-CLIP
Samacsys Released Date2018-10-10 15:06:05
Is SamacsysN
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)101 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)60 A
Maximum drain current (ID)19 A
Maximum drain-source on-resistance0.0074 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)80 pF
JESD-30 codeS-PDSO-N8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.7 W
Maximum pulsed drain current (IDM)114 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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