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1N4797CO

Description
Variable Capacitance Diode, 56pF C(T), 17V, Silicon, DIE-1
CategoryDiscrete semiconductor    diode   
File Size51KB,1 Pages
ManufacturerCobham PLC
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1N4797CO Overview

Variable Capacitance Diode, 56pF C(T), 17V, Silicon, DIE-1

1N4797CO Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCobham PLC
Parts packaging codeDIE
package instructionX-XUUC-N
Contacts1
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage17 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio1.7825
Nominal diode capacitance56 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeX-XUUC-N
JESD-609 codee0
Number of components1
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
minimum quality factor15
Maximum reverse current0.005 µA
Reverse test voltage15 V
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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