VBO 25
Single Phase Rectifier Bridge
Standard and Avalanche Types
I
dAV
=
38
A
V
RRM
= 800-1600 V
V
RSM
V
BRmin
V
RRM
Standard
Avalanche
V
V
V
Types
Types
900
800 VBO 25-08NO2
1300 1230 1200 VBO 25-12NO2 VBO 25-12AO2
1700 1630 1600 VBO 25-16NO2 VBO 25-16AO2
For Avalanche Type only
+
~
~
~
-
~
+
-
Symbol
I
dAV
I
dAVM
P
RSM
I
FSM
Conditions
T
C
= 85°C, module
module
T
VJ
= T
VJM
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
;
V
R
= 0
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
Maximum Ratings
38
40
3.4
370
390
320
340
680
640
510
470
-40...+150
150
-40...+125
A
A
kW
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
V~
V~
Nm
lb.in.
g
Features
•Avalanche
rated parts available
•Package
with DCB ceramic base plate
•Isolationvoltage
3600 V~
•Planarpassivated
chips
•Low
forward voltage drop
•¼"fast-on
terminals
•ULregisteredE72873
Applications
•Suppliesfor
DC power equipment
•
Input rectifiers for PWM inverter
•
Battery DC power supplies
•
Field supply for DC motors
Advantages
•Easytomountwithonescrew
•
Space and weight savings
•
Improved temperature & power cycling
Dimensions in mm (1 mm = 0.0394“)
I
2
t
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
;
V
R
= 0
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Symbol
I
R
V
F
V
T0
r
t
R
thJC
R
thJH
d
S
d
A
a
50/60 Hz, RMS
I
ISOL
< 1 mA
t = 1 min
t=1s
3000
3600
1.5-2
13-18
15
Mounting torque (M5)
(10-32 UNF)
Typ.
Conditions
V
R
= V
RRM
I
F
= 55 A
T
VJ
= 25°C
T
VJ
= T
VJM
T
VJ
= 25°C
Characteristic Values
0.3
5.0
1.36
0.85
8
2.80
0.70
3.20
0.80
13
9.5
50
mA
mA
V
V
mΩ
K/W
K/W
K/W
K/W
mm
mm
m/s
2
For power-loss calculations only
per diode; 120° el.
per module
per diode; 120° el.
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
for resistive load at bridge output
with isolated fast-on tabs.
IXYS reserves the right to change limits, test conditions and dimensions.
20100706b
© IXYS All rights reserved
1-2
VBO 25
Fig. 1
Surge overload current per diode
I
FSM
: Crest value, t: duration
Fig. 2
I
2
t versus time (1-10 ms)
per diode
Fig. 3
Max. forward current at case
temperature
Fig. 4
Power dissipation versus direct output current and ambient temperature
Constants for Z
thJK
calculation:
i
1
2
3
Fig. 5
Transient thermal impedance junction to heatsink per diode
20100706b
R
thi
(K/W)
0.775
1.390
1.055
t
i
(s)
0.0788
0.504
3.701
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
2-2
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