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1.5SMC160A

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CategoryDiscrete semiconductor    Transient suppression diode   
File Size2MB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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1.5SMC160A Overview

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1.5SMC160A Parametric

Parameter NameAttribute value
Case StyleSMC
Ppk(W)1500
MIN_(V)152.00
MAX_(V)168.00
Vwm_(V)136.0
Ir_(uA)1
Ippm_(A)6.85
Vc_(V)219.0
classDiodes
Transient Voltage Suppressors
1.5SMC Series
Breakdown Voltage: 6.8 to 600 V
Peak Pulse Power: 1500 W
Features
SMC/ DO-214AB
Glass passivated chip
1500 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty
cycle):0.01 %
Low leakage
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
RoHS compliant
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-750, method
2026
Polarity: Color band denotes cathode end
except Bipolar
Mounting position: Any
Mechanical Data
Maximum Ratings(T
A
=25
unless otherwise noted)
Value
Symbol
P
PP
1500
I
PP
See Next Table
P
D
6.5
I
FSM
V
F
T
J
, T
STG
200
3.5/5.0
–55 to +150
UNIT
W
A
W
A
V
°C
Parameter
Peak power dissipation with a 10/1000 s waveform
(1)
Peak pulse current wih a 10/1000 s waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak forward surge current, 8.3 ms single half sine-
wave unidirectional only
(2)
Maximum instantaneous forward voltage at 100 A for
unidirctional only
(3)
Operating junction and storage temperature range
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above T
A
= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
ht
t
p
:
//
Revision:20170301-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
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