GS864218B-200V datasheet, PDF - EEWORLD Datasheet

GS864218B-200V: DescriptionCache SRAM, 4MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119; Categorystorage storage; File Size729KB，35 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/

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Cache SRAM, 4MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	GSI Technology
Parts packaging code	BGA
package instruction	BGA,
Contacts	119
Reach Compliance Code	compliant
ECCN code	3A991.B.2.B
Factory Lead Time	8 weeks
Maximum access time	7.5 ns
Other features	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 code	R-PBGA-B119
JESD-609 code	e0
length	22 mm
memory density	75497472 bit
Memory IC Type	CACHE SRAM
memory width	18
Number of functions	1
Number of terminals	119
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX18
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.99 mm
Maximum supply voltage (Vsup)	2 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm

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