CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
GSS
r
DS(ON)
t
(ON)
t
d(ON)
t
r
t
d(OFF)
t
F
t
(OFF)
Q
g(TOT)
Q
g(-10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
V
GS
= 0V to -20V
V
GS
= 0V to -10V
V
GS
= 0V to -2V
V
DD
= -40V, I
D
= 60A,
R
L
= 0.67Ω
I
g(REF)
= -4mA
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= -50V, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
V
GS
=
±20V
I
D
= 60A, V
GS
= -10V (Figure 9)
V
DD
= -25V, I
D
= 30A, R
L
= 0.83Ω,
V
GS
= -10V, R
GS
= 2.5Ω
(Figure 13)
MIN
-50
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
20
60
65
20
-
-
-
-
7200
1700
325
-
-
MAX
-
-4
-1
-25
±100
0.030
125
-
-
-
-
125
450
225
15
-
-
-
0.70
30
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
NOTE:
2. Pulse test: pulse width
≤
300µs maximum, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
SYMBOL
V
SD
t
RR
TEST CONDITIONS
I
SD
= -60A
I
SD
= -60A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
-
-
MAX
-1.75
200
UNITS
V
ns
4-148
RFG60P05E
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
125
150
175
0.8
0.6
0.4
0.2
0
Unless Otherwise Specified
-70
-60
-50
-40
-30
-20
-10
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
Z
θJC
, NORMALIZED TRANSIENT
THERMAL IMPEDANCE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
0
10
1
P
DM
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-500
T
C
= 25
o
C, T
J
= MAX RATED
-500
V
GS
= -10V
-100
100ms
I
DM
, PEAK CURRENT (A)
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
175
–
T C
I
=
I 25
---------------------
-
150
1ms
-10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
-1
-1
10ms
100ms
DC
V
DSS
MAX = -50V
-100
-100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-50
10
-5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
4-149
RFG60P05E
Typical Performance Curves
-200
I
AS
, AVALANCHE CURRENT (A)
STARTING T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
-100
-120
V
GS
= -10V
-80
V
GS
= -6V
-40
V
GS
= -4.5V
V
GS
= -5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
Unless Otherwise Specified
(Continued)
-160
V
GS
= -20V
V
GS
= -8V
V
GS
= -7V
STARTING T
J
= 150
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
-10
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
0
0
-2
-4
-6
-8
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
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