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IC41C8512-60K

Description
EDO DRAM, 512KX8, 60ns, CMOS, PDSO28, 0.400 INCH, SOJ-28
Categorystorage    storage   
File Size202KB,21 Pages
ManufacturerISSI(Integrated Silicon Solution Inc.)
Websitehttp://www.issi.com/
Download Datasheet Parametric View All

IC41C8512-60K Overview

EDO DRAM, 512KX8, 60ns, CMOS, PDSO28, 0.400 INCH, SOJ-28

IC41C8512-60K Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerISSI(Integrated Silicon Solution Inc.)
package instruction0.400 INCH, SOJ-28
Reach Compliance Codecompliant
Is SamacsysN
access modeEDO PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J28
JESD-609 codee0
memory density4194304 bit
Memory IC TypeEDO DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ28,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
power supply5 V
Certification statusNot Qualified
refresh cycle1024
self refreshNO
Maximum standby current0.001 A
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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