K8S1015ETC-FE1F0 datasheet, PDF

K8S1015ETC-FE1F0: DescriptionFlash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-64; Categorystorage storage; File Size667KB，83 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K8S1015ETC-FE1F0 Overview

Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-64

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	VFBGA,
Contacts	64
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	100 ns
Other features	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup block	TOP
JESD-30 code	R-PBGA-B64
memory density	536870912 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	64
word count	33554432 words
character code	32000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Programming voltage	1.8 V
Maximum seat height	1 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.5 mm
Terminal location	BOTTOM
type	NOR TYPE

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