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KBJ2000

Description
25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size114KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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KBJ2000 Overview

25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

KBJ2000 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Code_compli
ECCN codeEAR99
Is SamacsysN
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current300 A
Number of components4
Maximum operating temperature150 °C
Maximum output current20 A
Maximum repetitive peak reverse voltage50 V
surface mountNO
Base Number Matches1

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DATA SHEET
KBJ2000~KBJ2010
SILICON BRIDGE RECTIFIERS
VOLTAGE - 50 to 1000 Volts CURRENT - 25.0 Amperes
FEATURES
• Plastic material has Underwriters Laboratory
Flammability Classification 94V-O
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded plastic technique
• Surge overload rating: 400 Amperes
• High temperature soldering guaranteed:
260° C/10 seconds/.375"(9.5mm) lead length at 5 lbs. (2.3kg) tension
• Pb free product are available : 99% Sn above can meet RoHS environment
substance directive request
MECHANICAL DATA
Case: Reliable low cost construction utilizing
molded plastic technique
Terminals: Leads solderable per MIL-STD-750,
Method 2026
Mounting position: Any
Mounting torque: 20 in. lb. Max.
Weight: 7.056g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25° C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
KBJ
2000
50
35
50
KBJ
2001
100
70
100
KBJ
2002
200
140
200
KBJ
2004
400
280
400
KBJ
2006
600
420
600
KBJ
2008
800
560
800
KBJ
2010
1000
700
1000
PARAMETER
SYMBOL
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current for Resistive
Load at Tc =55
Non-repetitive Peak Forward Surge Current, Rated
Load
Maximum Forward Voltage per Bridge
Element at 20A Specified Current
Maximum Reverse Leakage Current at Rated
@ TA=25
Typical Thermal Resistance(Fig 3 )
Operating Junction and Storage Temperature
Range
V
RRM
V
RMS
V
DC
V
V
V
I
AV
20
A
I
FSM
300
A
V
F
1.1
V
I
R
10
1.2
-50 TO +15 0
uA
R
QJC
T
J
, T
STG
/W
NOTES : Device mounted on 100mm *100mm * 1.6mm Cu Plate Heatsink.
STAD-JAN.28.2005
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