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30KPA198A

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CategoryDiscrete semiconductor    Transient suppression diode   
File Size1MB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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30KPA198A Parametric

Parameter NameAttribute value
Case StyleR-6
Ppk(W)30000
MIN_(V)221.20
MAX_(V)243.32
Vwm_(V)198
Ir_(uA)2
Ippm_(A)94.7
Vc_(V)319.8
classDiodes
30KPA Series
Axial Lead
Transient Voltage Suppressors
R-6/P600
Reverse Voltage: 28 to 320 V
Peak Pulse Power: 30000 W
Features
Glass passivated chip
30000 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle):0.01 %
Low leakage
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
RoHS compliant
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-202, method
208 guranteed
Polarity: Color band denotes cathode end
except Bipolar
Mounting position: Any
1.000 [25.40]
MIN
DIA.
0.052 1.32
0.048 1.22
[ ]
Mechanical Data
0.360 9.14
0.340 8.64
[ ]
DIA.
0.360 9.14
0.340 8.64
[ ]
1.000 [25.40]
MIN
Dimensions :
inch [ mm ]
Maximum Ratings(T
A
=25℃ unless otherwise noted)
Parameter
Peak power dissipation with a 10/1000μs waveform
(1)
Peak pulse current with a 10/1000μs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak forward surge current, 8.3 ms single half sine-
wave unidirectional only
(2)
Operating junction and storage temperature range
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above T
A
= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Value
Symbol
P
PP
30000
I
PP
See Next Table
P
D
8.0
I
FSM
T
J
, T
STG
500
- 55 to +175
Unit
W
A
W
A
°C
ht
t
p
:
//
Revision:20170701-P1
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
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