JAN1N6112A datasheet, PDF - EEWORLD Datasheet

JAN1N6112A: DescriptionTrans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon,; CategoryDiscrete semiconductor diode; File Size94KB，2 Pages; ManufacturerDefense Logistics Agency

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Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon,

Parameter Name	Attribute value
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Minimum breakdown voltage	16.2 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak reverse power dissipation	500 W
Number of components	1
Number of terminals	2
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	BIDIRECTIONAL
Maximum power dissipation	3 W
Certification status	Qualified
Guideline	MIL-19500/516
Maximum repetitive peak reverse voltage	13.7 V
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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