MXSMBJP6KE150C datasheet, PDF - EEWORLD Datasheet

MXSMBJP6KE150C: DescriptionTrans Voltage Suppressor Diode, 600W, 121V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN; CategoryDiscrete semiconductor diode; File Size561KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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MXSMBJP6KE150C Overview

Trans Voltage Suppressor Diode, 600W, 121V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	DO-214AA
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum breakdown voltage	165 V
Minimum breakdown voltage	135 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
JESD-609 code	e0
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	235
polarity	BIDIRECTIONAL
Maximum power dissipation	1.38 W
Certification status	Not Qualified
Guideline	MIL-19500
Maximum repetitive peak reverse voltage	121 V
surface mount	YES
technology	AVALANCHE
Terminal surface	TIN LEAD
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	20
Base Number Matches	1

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