DIODE 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
| Parameter Name | Attribute value |
| Maker | Toshiba Semiconductor |
| package instruction | O-PALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Maximum breakdown voltage | 110 V |
| Minimum breakdown voltage | 90 V |
| Breakdown voltage nominal value | 100 V |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | O-PALF-W2 |
| Maximum non-repetitive peak reverse power dissipation | 200 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -40 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | LONG FORM |
| polarity | UNIDIRECTIONAL |
| Maximum power dissipation | 1 W |
| Certification status | Not Qualified |
| Maximum reverse current | 10 µA |
| surface mount | NO |
| technology | AVALANCHE |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Base Number Matches | 1 |
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