1ZB220-ZTPA2 datasheet, PDF - EEWORLD Datasheet

1ZB220-ZTPA2: DescriptionDIODE 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor; CategoryDiscrete semiconductor diode; File Size76KB，3 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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1ZB220-ZTPA2 Overview

DIODE 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum breakdown voltage	240 V
Minimum breakdown voltage	220 V
Breakdown voltage nominal value	230 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	200 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	1 W
Certification status	Not Qualified
Maximum reverse current	10 µA
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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