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1N4148M

Description
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-34, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size139KB,2 Pages
ManufacturerDaco Semiconductor Co., Ltd.
Download Datasheet Parametric View All

1N4148M Overview

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-34, GLASS PACKAGE-2

1N4148M Parametric

Parameter NameAttribute value
MakerDaco Semiconductor Co., Ltd.
Parts packaging codeDO-34
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N4148M
SMALL SIGNAL SWITCHING DIODES
DO-34(GLASS)
Fast switching diodes
0.5W power dissipation
0.79(2.0)
MIN.
1.02(26.0)
MIN.
0.106(2.90)
MAX.
Case: DO-34 case
Polarity : Color band denotes cathode end
Weight : Approx 0.13 gram
0.016(0.42)
TYP.
1.02(26.0)
MIN.
Characteristic
Maximum peak reverse voltage
Reverse voltage
Maximum average forward rectified current
hlaf Wave rectification with resistive load
at Tamb=25 and f 50Hz
Peak forward surge current <1S and Tj=25
Power dissipation at Tamb=25
Maximum forward voltage
Maximum leakage current
IF=10mA
At VR=20V / 25
VR=75V / 25
VR=20V / 150
Symbol
V
RM
V
R
1N4148M
100
75
150
1)
Units
Volts
Volts
I
o
(AV)
I
FSM
Ptot
500
1)
500
1.0
0.025
W
Volts
V
F
I
R
V
(BR)R
C
TOT
V
FR
TRR
5
50
uA
uA
uA
Volts
PF
Volts
Minimun reverse breakdown voltage tested
with 100
S
pulses
Capacitance at VF=VR=0
Voltage rise when switching on tested with 50mA
forward pluses Tp=0.1us. Rise time <30nS.
Fp=5~100KHz
Reverse recovery time from
IF=-IR=10mA to IRR=-1mA, VR=6V RL=100
Maximun thermal resistance from junction to ambient
100
4
2.5
4
350
1)
0.45
K/mW
Minimun Rectification efficiency at f=100MHz, vrf=2V
Junction temperature
Storage temperature range
TJ
TStg
200
-65to+200
1):Valid provided that leads at a distance of 8mm from case are kept at ambient temperature (DO-34)

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