K8S1115EBC-DC1ET datasheet, PDF

K8S1115EBC-DC1ET: DescriptionEEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,; Categorystorage storage; File Size667KB，83 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K8S1115EBC-DC1ET Overview

EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
package instruction	FBGA, BGA64,10X14,20
Reach Compliance Code	compliant
Is Samacsys	N
Maximum access time	95 ns
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B64
JESD-609 code	e3
memory density	536870912 bit
Memory IC Type	EEPROM CARD
memory width	16
Humidity sensitivity level	1
Number of departments/size	4,511
Number of terminals	64
word count	33554432 words
character code	32000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA64,10X14,20
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	1.8 V
Programming voltage	2.7 V
Certification status	Not Qualified
ready/busy	YES
Department size	16K,64K
Maximum standby current	0.00003 A
Maximum slew rate	0.07 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	MATTE TIN
Terminal form	BALL
Terminal pitch	0.5 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
Base Number Matches	1

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