Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | conform to |
Maker | Infineon |
Parts packaging code | D2PAK |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Contacts | 4 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Samacsys Confidence | 4 |
Samacsys Status | Released |
Samacsys PartID | 1677752 |
Samacsys Pin Count | 3 |
Samacsys Part Category | Transistor IGBT |
Samacsys Package Category | Other |
Samacsys Footprint Name | PG-TO263-3_FFW |
Samacsys Released Date | 2018-12-19 16:08:41 |
Is Samacsys | N |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 20 A |
Collector-emitter maximum voltage | 600 V |
Configuration | SINGLE |
JEDEC-95 code | TO-263AB |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Tin (Sn) |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | POWER CONTROL |
Transistor component materials | SILICON |
Nominal off time (toff) | 296 ns |
Nominal on time (ton) | 21 ns |
Base Number Matches | 1 |