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1SMB11ATR13

Description
Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size63KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

1SMB11ATR13 Overview

Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon,

1SMB11ATR13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionR-PDSO-C2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Maximum breakdown voltage14 V
Minimum breakdown voltage12.2 V
Breakdown voltage nominal value13.1 V
Maximum clamping voltage18.2 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage11 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn80Pb20)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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