1.4KESD60CTRE3 datasheet, PDF - EEWORLD Datasheet

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1.4KESD60CTRE3: DescriptionTrans Voltage Suppressor Diode, 60V V(RWM), Bidirectional,; CategoryDiscrete semiconductor diode; File Size173KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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1.4KESD60CTRE3 Overview

Trans Voltage Suppressor Diode, 60V V(RWM), Bidirectional,

1.4KESD60CTRE3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microsemi
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum clamping voltage	133.4 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
polarity	BIDIRECTIONAL
Maximum repetitive peak reverse voltage	60 V
surface mount	NO
Base Number Matches	1

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1.4KESD5.0 thru 1.4KESD170CA, e3

AXIAL-LEAD TVS

SCOTTSDALE DIVISION

DESCRIPTION

These small axial-leaded TVS devices feature the ability to clamp

dangerous high voltage short-term transients such as produced by directed

or radiated electrostatic discharge phenomena before entering sensitive

component regions of a circuit design. They are small economical transient

voltage suppressors targeted primarily for short-term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as illustrated in Figure #1.

APPEARANCE

WWW .

Microsemi

DO-35

(DO-204AH)

IMPORTANT:

For the most current data, consult

MICROSEMI’s

website:

http://www.microsemi.com

FEATURES

•

Excellent protection in clamping direct ESD level

transients in excess of 15,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

•

Absorbs ESD level transients* of 1400 Watts per MIL-

STD-750, Method 1020 (approx. 150 ns exponential

wave, or one microsecond transients up to 400 watts.

See Figure #1 and #2 for overall transient Peak Pulse

Power.

•

Clamps Transients in less than 100 picoseconds

•

Working Stand-off Voltage range of 5 V to 170 V

•

Hermetic DO-35 Package. Also available in surface

mount DO-213AA MELF package (see separate data

sheet)

•

RoHS Compliant devices available by adding “e3” suffix

APPLICATIONS / BENEFITS

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

•

Low inherent capacitance for high-frequency

applications (See Figure #4)

•

Flexible axial-lead mounting terminals

•

Bidirectional features available by adding a “C” or

“CA” suffix

MAXIMUM RATINGS

•

400 Watts for One Microsecond Square Wave or

1400 watts per ESD Wave form of MIL-STD-750,

method 1020.

•

See Surge Rating curve in Figures #1 and 2.

•

Operating and storage temperature –65 C to 175 C

•

THERMAL RESISTANCE: Less than 250

C/W

junction to lead at 0.375 inches from body.

•

DC power dissipation 500 mW at T

= 75

C at 3/8

inch (10 mm) lead length from body.

•

Derate at 2.3 W/

C above 25

C for P

(1μs) and at

5 mW/ C above 100 C for dc power.

•

Forward Surge Current 50 amps for 1μs at T

= 25 C

(rise time > 100 ns).

MECHANICAL AND PACKAGING

•

CASE: Hermetically sealed axial-lead glass DO-35

(DO-204AH) package

•

FINISH: Tin-lead or RoHS Compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

•

POLARITY: Banded end is cathode

•

WEIGHT: 0.2 grams (typical)

•

MARKING: Part number

•

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

See package dimension on last page

1.4KESD5.0 thru

1.4KESD170A, e3

2006

3-29-2006 REV B

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 1

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